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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,190
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
1,276
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
1,361
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO214AA | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
2,471
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO214AA | - | Active | Digi-Reel® | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
3,896
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO214AA | - | Active | Cut Tape (CT) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
1,172
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO214AA | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
1,761
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | - | Active | Digi-Reel® | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
3,030
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | - | Active | Cut Tape (CT) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
690
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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|
VIEW |
1,192
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | Automotive, AEC-Q101 | Active | Digi-Reel® | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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|
VIEW |
3,934
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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|
VIEW |
3,040
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
