- Series :
- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
3,561
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 20A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 700µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | |||
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VIEW |
1,423
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 20A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 700µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | |||
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VIEW |
2,139
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1.7KV 20A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 20A (DC) | 1.75V @ 20A | 40µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1624pF @ 1V, 1MHz | |||
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VIEW |
2,062
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 20A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 20A (DC) | 1.35V @ 8A | 27µA @ 420V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 401pF @ 1V, 1MHz | |||
|
VIEW |
2,421
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 20A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 210µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | |||
|
VIEW |
2,845
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 20A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 210µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | |||
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VIEW |
3,162
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 650V 2A TO252-2 | - | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 6A | 50µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 295pF @ 0V, 1MHz | |||
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VIEW |
2,804
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 20A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 20A (DC) | 1.8V @ 20A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1270pF @ 1V, 1MHz | |||
|
VIEW |
996
In-stock
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Infineon Technologies | DIODE SCHOTKY 650V 20A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 210µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | |||
|
VIEW |
1,804
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 20A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 20A (DC) | 1.8V @ 20A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1270pF @ 1V, 1MHz |