Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
S1JHR3G
RFQ
VIEW
RFQ
3,612
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO214AC Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.1V @ 1A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 12pF @ 4V, 1MHz
S1JHM2G
RFQ
VIEW
RFQ
3,765
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO214AC Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.1V @ 1A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 12pF @ 4V, 1MHz
S1J M2G
RFQ
VIEW
RFQ
2,363
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO214AC - Active Tape & Reel (TR) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.1V @ 1A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 12pF @ 4V, 1MHz
S1J R3G
RFQ
VIEW
RFQ
2,453
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO214AC - Active Digi-Reel® Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.1V @ 1A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 12pF @ 4V, 1MHz
S1J R3G
RFQ
VIEW
RFQ
2,440
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO214AC - Active Cut Tape (CT) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.1V @ 1A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 12pF @ 4V, 1MHz
S1J R3G
RFQ
VIEW
RFQ
3,907
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO214AC - Active Tape & Reel (TR) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.1V @ 1A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 12pF @ 4V, 1MHz