Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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IDH04SG60CXKSA1
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RFQ
1,418
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Infineon Technologies DIODE SCHOTTKY 600V 4A TO220-2 thinQ!™ Discontinued at Digi-Key Tube Through Hole TO-220-2 PG-TO220-2 Silicon Carbide Schottky 4A (DC) 2.3V @ 4A 25µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 80pF @ 1V, 1MHz
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RFQ
2,696
In-stock
Infineon Technologies DIODE SCHOTTKY 600V 4A TO220-2 thinQ!™ Active - Through Hole TO-220-2 PG-TO220-2-1 Silicon Carbide Schottky 4A (DC) 2.3V @ 4A 25µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 80pF @ 1V, 1MHz
APT30DQ60KG
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RFQ
3,309
In-stock
Microsemi Corporation DIODE GEN PURP 600V 30A TO220 - Active Tube Through Hole TO-220-2 TO-220 [K] Standard 30A 2.4V @ 30A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -55°C ~ 175°C -
APT15DQ60KG
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RFQ
2,970
In-stock
Microsemi Corporation DIODE GEN PURP 600V 15A TO220 - Active Tube Through Hole TO-220-2 TO-220 [K] Standard 15A 2.4V @ 15A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 19ns -55°C ~ 175°C -