Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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IDP23E60
RFQ
VIEW
RFQ
3,391
In-stock
Infineon Technologies DIODE GEN PURP 600V 41A TO220-2 - Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Standard 41A (DC) 2V @ 23A 50µA @ 600V 600V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C -
IDB23E60ATMA1
RFQ
VIEW
RFQ
952
In-stock
Infineon Technologies DIODE GEN PURP 600V 41A TO263-3 - Obsolete Tape & Reel (TR) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 Standard 41A (DC) 2V @ 23A 50µA @ 600V 600V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C -
TPAR3G S1G
RFQ
VIEW
RFQ
3,949
In-stock
Taiwan Semiconductor Corporation DIODE AVALANCHE 400V 3A TO277A - Active Digi-Reel® Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 3A 1.55V @ 3A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C 58pF @ 4V, 1MHz
TPAR3G S1G
RFQ
VIEW
RFQ
2,227
In-stock
Taiwan Semiconductor Corporation DIODE AVALANCHE 400V 3A TO277A - Active Cut Tape (CT) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 3A 1.55V @ 3A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C 58pF @ 4V, 1MHz
TPAR3G S1G
RFQ
VIEW
RFQ
763
In-stock
Taiwan Semiconductor Corporation DIODE AVALANCHE 400V 3A TO277A - Active Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 3A 1.55V @ 3A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C 58pF @ 4V, 1MHz
TPAR3D S1G
RFQ
VIEW
RFQ
2,205
In-stock
Taiwan Semiconductor Corporation DIODE AVALANCHE 200V 3A TO277A - Active Digi-Reel® Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 3A 1.55V @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C 58pF @ 4V, 1MHz
TPAR3D S1G
RFQ
VIEW
RFQ
1,345
In-stock
Taiwan Semiconductor Corporation DIODE AVALANCHE 200V 3A TO277A - Active Cut Tape (CT) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 3A 1.55V @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C 58pF @ 4V, 1MHz
TPAR3D S1G
RFQ
VIEW
RFQ
850
In-stock
Taiwan Semiconductor Corporation DIODE AVALANCHE 200V 3A TO277A - Active Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 3A 1.55V @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C 58pF @ 4V, 1MHz
TPAR3J S1G
RFQ
VIEW
RFQ
2,413
In-stock
Taiwan Semiconductor Corporation DIODE AVALANCHE 600V 3A TO277A - Active Digi-Reel® Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 3A 1.55V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C 58pF @ 4V, 1MHz
TPAR3J S1G
RFQ
VIEW
RFQ
3,266
In-stock
Taiwan Semiconductor Corporation DIODE AVALANCHE 600V 3A TO277A - Active Cut Tape (CT) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 3A 1.55V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C 58pF @ 4V, 1MHz
TPAR3J S1G
RFQ
VIEW
RFQ
2,971
In-stock
Taiwan Semiconductor Corporation DIODE AVALANCHE 600V 3A TO277A - Active Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 3A 1.55V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C 58pF @ 4V, 1MHz
IDW100E60FKSA1
RFQ
VIEW
RFQ
2,349
In-stock
Infineon Technologies DIODE GEN PURP 600V 150A TO247-3 - Active Tube Through Hole TO-247-3 PG-TO247-3 Standard 150A (DC) 2V @ 100A 40µA @ 600V 600V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C -