Supplier Device Package :
Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Current - Reverse Leakage @ Vr :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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ESH3B R7G
RFQ
VIEW
RFQ
3,300
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 900mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 20ns -55°C ~ 175°C 45pF @ 4V, 1MHz
ESH3B V6G
RFQ
VIEW
RFQ
1,063
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO214AB - Active - Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A - 5µA @ 100V 100V Fast Recovery = 200mA (Io) 20ns -55°C ~ 175°C 45pF @ 4V, 1MHz
ESH3B M6G
RFQ
VIEW
RFQ
660
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 900mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 20ns -55°C ~ 175°C 45pF @ 4V, 1MHz
ESH2B M4G
RFQ
VIEW
RFQ
2,116
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 2A DO214AA - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 900mV @ 2A 2µA @ 100V 100V Fast Recovery = 200mA (Io) 20ns -55°C ~ 175°C 25pF @ 4V, 1MHz
ESH3B V7G
RFQ
VIEW
RFQ
2,994
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO214AB - Active - Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A - 5µA @ 100V 100V Fast Recovery = 200mA (Io) 20ns -55°C ~ 175°C 45pF @ 4V, 1MHz
ESH2B R5G
RFQ
VIEW
RFQ
1,504
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 2A DO214AA - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 900mV @ 2A 2µA @ 100V 100V Fast Recovery = 200mA (Io) 20ns -55°C ~ 175°C 25pF @ 4V, 1MHz