- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
- Applied Filters :
12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,899
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 475pF @ 0V, 1MHz | |||
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|
VIEW |
3,788
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
|
VIEW |
3,117
In-stock
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Microsemi Corporation | DIODE GEN PURP 1.2KV 30A TO220 | - | Active | Tube | Through Hole | TO-220-3 | TO-220 [K] | Standard | 30A | 3.3V @ 30A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 320ns | -55°C ~ 175°C | - | |||
|
VIEW |
1,282
In-stock
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Microsemi Corporation | DIODE GEN PURP 1.2KV 60A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 60A | 3.3V @ 60A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 320ns | -55°C ~ 175°C | - | |||
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|
VIEW |
1,209
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 18A (DC) | 1.7V @ 5A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 475pF @ 0V, 1MHz | |||
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|
VIEW |
2,562
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | Silicon Carbide Schottky | 6.2A (DC) | 1.7V @ 2A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 136pF @ 0V, 1MHz | |||
|
VIEW |
3,131
In-stock
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Microsemi Corporation | DIODE GEN PURP 1.2KV 15A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220 [K] | Standard | 15A | 3.3V @ 15A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 240ns | -55°C ~ 175°C | - | |||
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|
VIEW |
3,618
In-stock
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Microsemi Corporation | DIODE GEN PURP 1.2KV 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 30A | 3.3V @ 30A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 320ns | -55°C ~ 175°C | - | |||
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|
VIEW |
947
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
|
VIEW |
3,486
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 15A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 [B] | Standard | 15A | 3.3V @ 15A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 240ns | -55°C ~ 175°C | - | |||
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|
VIEW |
3,432
In-stock
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Microsemi Corporation | DIODE GEN PURP 1.2KV 75A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 75A | 3.1V @ 75A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 325ns | -55°C ~ 175°C | - | |||
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|
VIEW |
3,588
In-stock
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Microsemi Corporation | DIODE GEN PURP 1.2KV 40A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 40A | 3.3V @ 40A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 350ns | -55°C ~ 175°C | - | |||
