- Packaging :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
- Applied Filters :
12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,604
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A TO277A | - | Active | Digi-Reel® | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.2V @ 6A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | 60pF @ 4V, 1MHz | |||
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VIEW |
3,840
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A TO277A | - | Active | Cut Tape (CT) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.2V @ 6A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
3,400
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A TO277A | - | Active | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.2V @ 6A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | 60pF @ 4V, 1MHz | |||
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VIEW |
3,036
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A TO277A | - | Active | Digi-Reel® | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.8V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 175°C | 60pF @ 4V, 1MHz | |||
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VIEW |
1,977
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A TO277A | - | Active | Cut Tape (CT) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.8V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 175°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
971
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A TO277A | - | Active | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.8V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 175°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
1,602
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A TO277A | - | Active | Digi-Reel® | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 3V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
773
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A TO277A | - | Active | Cut Tape (CT) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 3V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
1,812
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A TO277A | - | Active | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 3V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
920
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A TO277A | - | Active | Digi-Reel® | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.05V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
3,533
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A TO277A | - | Active | Cut Tape (CT) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.05V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
1,597
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A TO277A | - | Active | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.05V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | 50pF @ 4V, 1MHz |