Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
1N4003
RFQ
VIEW
RFQ
1,920
In-stock
ON Semiconductor DIODE GEN PURP 200V 1A DO41 - Discontinued at Digi-Key Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 15pF @ 4V, 1MHz
1N4003
RFQ
VIEW
RFQ
2,274
In-stock
ON Semiconductor DIODE GEN PURP 200V 1A DO41 - Obsolete Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 15pF @ 4V, 1MHz
1N4003GP
RFQ
VIEW
RFQ
1,411
In-stock
ON Semiconductor DIODE GEN PURP 200V 1A DO41 - Obsolete Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 15pF @ 4V, 1MHz
UFS120JE3/TR13
RFQ
VIEW
RFQ
1,244
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A DO214BA - Active Tape & Reel (TR) Surface Mount DO-214BA DO-214BA Standard 1A 950mV @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 30ns -55°C ~ 175°C -
BYV26A-TR
RFQ
VIEW
RFQ
2,488
In-stock
Vishay Semiconductor Diodes Division DIODE AVALANCHE 200V 1A SOD57 - Active Tape & Reel (TR) Through Hole SOD-57, Axial SOD-57 Avalanche 1A 2.5V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 30ns -55°C ~ 175°C -
BYV26A-TAP
RFQ
VIEW
RFQ
1,586
In-stock
Vishay Semiconductor Diodes Division DIODE AVALANCHE 200V 1A SOD57 - Active Tape & Box (TB) Through Hole SOD-57, Axial SOD-57 Avalanche 1A 2.5V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 30ns -55°C ~ 175°C -
SF4003-TR
RFQ
VIEW
RFQ
1,598
In-stock
Vishay Semiconductor Diodes Division DIODE AVAL 1A 200V SOD-57 - Active Tape & Reel (TR) Through Hole SOD-57, Axial SOD-57 Avalanche 1A 1V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 76pF @ 4V, 1MHz
SF4003-TAP
RFQ
VIEW
RFQ
3,767
In-stock
Vishay Semiconductor Diodes Division DIODE AVAL 1A 200V SOD-57 - Active Tape & Box (TB) Through Hole SOD-57, Axial SOD-57 Avalanche 1A 1V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C -
SE10FD-M3/I
RFQ
VIEW
RFQ
2,239
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO219AB - Active Tape & Reel (TR) Surface Mount DO-219AB DO-219AB (SMF) Standard 1A 1.05V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 780ns -55°C ~ 175°C 7.5pF @ 4V, 1MHz
S1DL RUG
RFQ
VIEW
RFQ
3,006
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
S1DL RFG
RFQ
VIEW
RFQ
2,458
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
S1DL R3G
RFQ
VIEW
RFQ
2,469
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
S1DL RTG
RFQ
VIEW
RFQ
1,526
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
S1DL RQG
RFQ
VIEW
RFQ
2,571
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
S1DL MTG
RFQ
VIEW
RFQ
3,510
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
S1DL MQG
RFQ
VIEW
RFQ
2,681
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
S1DL MHG
RFQ
VIEW
RFQ
804
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
S1DL M2G
RFQ
VIEW
RFQ
2,416
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
S1DL RHG
RFQ
VIEW
RFQ
3,808
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 1A 1.1V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.8µs -55°C ~ 175°C 9pF @ 4V, 1MHz
ES1DLWHRVG
RFQ
VIEW
RFQ
1,371
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Digi-Reel® Surface Mount SOD-123W SOD123W Standard 1A 950mV @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 175°C 20pF @ 4V, 1MHz
ES1DLWHRVG
RFQ
VIEW
RFQ
3,833
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Cut Tape (CT) Surface Mount SOD-123W SOD123W Standard 1A 950mV @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 175°C 20pF @ 4V, 1MHz
ES1DLWHRVG
RFQ
VIEW
RFQ
1,436
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Tape & Reel (TR) Surface Mount SOD-123W SOD123W Standard 1A 950mV @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 175°C 20pF @ 4V, 1MHz
ES1DLW RVG
RFQ
VIEW
RFQ
1,209
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Digi-Reel® Surface Mount SOD-123W SOD123W Standard 1A 950mV @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 175°C 20pF @ 4V, 1MHz
ES1DLW RVG
RFQ
VIEW
RFQ
2,121
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Cut Tape (CT) Surface Mount SOD-123W SOD123W Standard 1A 950mV @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 175°C 20pF @ 4V, 1MHz
ES1DLW RVG
RFQ
VIEW
RFQ
2,064
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Tape & Reel (TR) Surface Mount SOD-123W SOD123W Standard 1A 950mV @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 175°C 20pF @ 4V, 1MHz
RS1DLWHRVG
RFQ
VIEW
RFQ
1,528
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Digi-Reel® Surface Mount SOD-123W SOD123W Standard 1A 1.3V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -55°C ~ 175°C -
RS1DLWHRVG
RFQ
VIEW
RFQ
2,743
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Cut Tape (CT) Surface Mount SOD-123W SOD123W Standard 1A 1.3V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -55°C ~ 175°C -
RS1DLWHRVG
RFQ
VIEW
RFQ
2,867
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Tape & Reel (TR) Surface Mount SOD-123W SOD123W Standard 1A 1.3V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -55°C ~ 175°C -
SE10FD-M3/H
RFQ
VIEW
RFQ
838
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO219AB - Active Digi-Reel® Surface Mount DO-219AB DO-219AB (SMF) Standard 1A 1.05V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 780ns -55°C ~ 175°C 7.5pF @ 4V, 1MHz
SE10FD-M3/H
RFQ
VIEW
RFQ
3,558
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO219AB - Active Cut Tape (CT) Surface Mount DO-219AB DO-219AB (SMF) Standard 1A 1.05V @ 1A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 780ns -55°C ~ 175°C 7.5pF @ 4V, 1MHz