Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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APT60D30BG
RFQ
VIEW
RFQ
1,653
In-stock
Microsemi Corporation DIODE GEN PURP 300V 60A TO247 - Obsolete Tube Through Hole TO-247-2 TO-247 Standard 60A 1.4V @ 60A 250µA @ 300V 300V Fast Recovery = 200mA (Io) 38ns -55°C ~ 175°C -
APT15D40KG
RFQ
VIEW
RFQ
3,325
In-stock
Microsemi Corporation DIODE GEN PURP 400V 15A TO220-2 - Obsolete Tube Through Hole TO-220-2 TO-220-2 Standard 15A 1.5V @ 15A 150µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 175°C -
IDP23E60
RFQ
VIEW
RFQ
3,391
In-stock
Infineon Technologies DIODE GEN PURP 600V 41A TO220-2 - Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Standard 41A (DC) 2V @ 23A 50µA @ 600V 600V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C -
IDP06E60
RFQ
VIEW
RFQ
3,934
In-stock
Infineon Technologies DIODE GEN PURP 600V 14.7A TO220 - Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Standard 14.7A (DC) 2V @ 6A 50µA @ 600V 600V Fast Recovery = 200mA (Io) 70ns -55°C ~ 175°C -
DLA60I1200HA
RFQ
VIEW
RFQ
2,776
In-stock
IXYS DIODE GEN PURP 1200V 60A TO247AD - Active Tube Through Hole TO-247-2 TO-247AD Standard 60A 1.19V @ 60A 30µA @ 1200V 1200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 33pF @ 400V, 1MHz
APT30D40BG
RFQ
VIEW
RFQ
1,372
In-stock
Microsemi Corporation DIODE GEN PURP 400V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.5V @ 30A 250µA @ 400V 400V Fast Recovery = 200mA (Io) 32ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
3,760
In-stock
IXYS DIODE GEN PURP 1800V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 30A 1.25V @ 30A 40µA @ 1800V 1800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 10pF @ 400V, 1MHz
IDP15E60XKSA1
RFQ
VIEW
RFQ
1,499
In-stock
Infineon Technologies DIODE GEN PURP 600V 29.2A TO220 - Active Tube Through Hole TO-220-2 PG-TO220-2 Standard 29.2A (DC) 2V @ 15A 50µA @ 600V 600V Fast Recovery = 200mA (Io) 87ns -55°C ~ 175°C -
UGA15120 C0G
RFQ
VIEW
RFQ
3,074
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 15A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 15A 2.9V @ 15A 5µA @ 1200V - Fast Recovery = 200mA (Io) 65ns -55°C ~ 175°C -
UHF8JT-E3/45
RFQ
VIEW
RFQ
3,143
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 8A ITO220AC - Last Time Buy Tube Through Hole TO-220-2 Full Pack, Isolated Tab ITO-220AC Standard 8A 3V @ 8A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 45ns -55°C ~ 175°C -
UHF10JT-E3/45
RFQ
VIEW
RFQ
3,761
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 10A ITO220AC - Last Time Buy Tube Through Hole TO-220-2 Full Pack, Isolated Tab ITO-220AC Standard 10A - - 600V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C -
VS-8TQ060-N3
RFQ
VIEW
RFQ
3,903
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 60V 8A TO220AC - Last Time Buy Tube Through Hole TO-220-2 TO-220AC Standard 8A 720mV @ 8A 50µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 175°C -
APT100DL60BG
RFQ
VIEW
RFQ
3,878
In-stock
Microsemi Corporation DIODE GEN PURP 600V 100A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 100A 1.6V @ 100A - 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C -
APT60D120SG
RFQ
VIEW
RFQ
693
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 60A D3 - Active Tube Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3 [S] Standard 60A 2.5V @ 60A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 400ns -55°C ~ 175°C -
MUR840 C0G
RFQ
VIEW
RFQ
2,009
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.3V @ 8A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C -
APT30DQ120KG
RFQ
VIEW
RFQ
3,117
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 30A TO220 - Active Tube Through Hole TO-220-3 TO-220 [K] Standard 30A 3.3V @ 30A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 320ns -55°C ~ 175°C -
APT15D60BG
RFQ
VIEW
RFQ
2,604
In-stock
Microsemi Corporation DIODE GEN PURP 600V 15A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 15A 1.8V @ 15A 150µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 175°C -
APT30DQ100KG
RFQ
VIEW
RFQ
1,882
In-stock
Microsemi Corporation DIODE GEN PURP 1KV 30A TO220 - Active Tube Through Hole TO-220-2 TO-220 [K] Standard 30A 3V @ 30A 100µA @ 1000V 1000V Fast Recovery = 200mA (Io) 295ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
1,839
In-stock
IXYS DIODE GEN PURP 2.2KV 30A I4PAC - Active Tube Through Hole TO-251-2, IPak i4-PAC Standard 30A 1.25V @ 30A 40µA @ 2200V 2200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 7pF @ 700V, 1MHz
APT60D20BG
RFQ
VIEW
RFQ
2,091
In-stock
Microsemi Corporation DIODE GEN PURP 200V 60A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 60A 1.3V @ 60A 250µA @ 200V 200V Fast Recovery = 200mA (Io) 31ns -55°C ~ 175°C -
APT30D120BG
RFQ
VIEW
RFQ
1,643
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 30A 2.5V @ 30A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 370ns -55°C ~ 175°C -
APT60DQ120BG
RFQ
VIEW
RFQ
1,282
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 60A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 60A 3.3V @ 60A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 320ns -55°C ~ 175°C -
APT75DQ100BG
RFQ
VIEW
RFQ
2,630
In-stock
Microsemi Corporation DIODE GEN PURP 1KV 75A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 75A 3V @ 75A 100µA @ 1000V 1000V Fast Recovery = 200mA (Io) 250ns -55°C ~ 175°C -
DNA30E2200PC-TUB
RFQ
VIEW
RFQ
2,354
In-stock
IXYS DIODE GEN PURP 2.2KV 30A TO263 - Active Tube Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) Standard 30A 1.26V @ 30A 40µA @ 2200V 2200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 7pF @ 700V, 1MHz
DMA10I1600PA
RFQ
VIEW
RFQ
921
In-stock
IXYS DIODE GEN PURP 1600V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 1.26V @ 10A 10µA @ 1600V 1600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 4pF @ 400V, 1MHz
UH10JT-E3/4W
RFQ
VIEW
RFQ
2,971
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 10A TO220AC - Last Time Buy Tube Through Hole TO-220-2 TO-220AC Standard 10A - - 600V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
2,549
In-stock
SMC Diode Solutions DIODE GEN PURP 600V 20A TO247AC - Active Tube Through Hole TO-247-2 TO-247AC Standard 20A 1.7V @ 20A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C -
MURF8L60 C0G
RFQ
VIEW
RFQ
3,447
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1.3V @ 8A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 65ns -55°C ~ 175°C -
UH5JT-E3/4W
RFQ
VIEW
RFQ
2,955
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 8A TO220AC - Last Time Buy Tube Through Hole TO-220-2 TO-220AC Standard 8A 3V @ 5A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 40ns -55°C ~ 175°C -
UGF12JD C0G
RFQ
VIEW
RFQ
3,569
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 12A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 12A 3.1V @ 12A 500nA @ 600V 600V Fast Recovery = 200mA (Io) 45ns -55°C ~ 175°C -