- Part Status :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.35V @ 10A (1)
- 1.35V @ 12A (1)
- 1.35V @ 16A (1)
- 1.35V @ 20A (1)
- 1.35V @ 4A (1)
- 1.35V @ 6A (1)
- 1.35V @ 8A (1)
- 1.4V @ 10A (1)
- 1.75V @ 10A (2)
- 1.75V @ 12A (1)
- 1.75V @ 15A (1)
- 1.75V @ 16A (1)
- 1.75V @ 20A (2)
- 1.75V @ 30A (1)
- 1.75V @ 6A (1)
- 1.75V @ 8A (2)
- 1.7V @ 10A (2)
- 1.7V @ 5A (1)
- 1.7V @ 8A (1)
- 1.8V @ 10A (3)
- 1.8V @ 10kHz (1)
- 1.8V @ 1A (1)
- 1.8V @ 2A (3)
- 1.8V @ 4A (1)
- 1.8V @ 6A (1)
- 1.8V @ 8A (1)
- Current - Reverse Leakage @ Vr :
-
- 100µA @ 1200V (2)
- 100µA @ 1700V (1)
- 100µA @ 650V (1)
- 14µA @ 420V (1)
- 200µA @ 1200V (4)
- 200µA @ 300V (1)
- 200µA @ 600V (5)
- 200µA @ 650V (7)
- 20µA @ 420V (1)
- 27µA @ 420V (1)
- 2µA @ 1200V (1)
- 33µA @ 420V (1)
- 400µA @ 1200V (1)
- 40µA @ 1200V (1)
- 40µA @ 420V (1)
- 50µA @ 1200V (2)
- 53µA @ 420V (1)
- 67µA @ 420V (1)
- Capacitance @ Vr, F :
-
- 1085pF @ 1V, 100kHz (1)
- 120pF @ 0V, 1MHz (1)
- 1220pF @ 1V, 100KHz (1)
- 138pF @ 1V, 1MHz (1)
- 1400pF @ 0V, 1MHz (1)
- 1705pF @ 1V, 100kHz (1)
- 205pF @ 1V, 1MHz (1)
- 220pF @ 0V, 1MHz (1)
- 260pF @ 1V, 1MHz (1)
- 302pF @ 1V, 1MHz (1)
- 340pF @ 0V, 1MHz (1)
- 361pF @ 1V, 100kHz (1)
- 401pF @ 1V, 1MHz (1)
- 41pF @ 600V, 1MHz (1)
- 463pF @ 1V, 100kHz (1)
- 470pF @ 0V, 1MHz (1)
- 475pF @ 0V, 1MHz (1)
- 495pF @ 1V, 1MHz (1)
- 520pF @ 1V, 1MHz (1)
- 538pF @ 1V, 100kHz (1)
- 550pF @ 0V, 1MHz (1)
- 560pF @ 0V, 1MHz (1)
- 575pF @ 1V, 100kHz (1)
- 594pF @ 1V, 1MHz (1)
- 612pF @ 1V, 100kHz (1)
- 660pF @ 0V, 1MHz (1)
- 665pF @ 1V, 100kHz (1)
- 69pF @ 1V, 1MHz (1)
- 780pF @ 0V, 1MHz (1)
- 783pF @ 1V, 1MHz (1)
- 887pF @ 1V, 100kHz (1)
- 936pF @ 1V, 100kHz (1)
- 970pF @ 1V, 1MHz (1)
- Applied Filters :
34 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||
|
VIEW |
3,978
In-stock
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 16.5A TO220 | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 16.5A | 1.8V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 550pF @ 0V, 1MHz | |||
|
|
VIEW |
1,136
In-stock
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 10A TO220-2 | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.8V @ 6A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 340pF @ 0V, 1MHz | |||
|
|
VIEW |
2,593
In-stock
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 7A TO220-2 | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 7A | 1.8V @ 4A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 220pF @ 0V, 1MHz | |||
|
|
VIEW |
2,730
In-stock
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 3.5A TO220-2 | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 3.5A | 1.8V @ 2A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 120pF @ 0V, 1MHz | |||
|
|
VIEW |
2,546
In-stock
|
Cree/Wolfspeed | DIODE SCHOTTKY 300V 10A TO220-2 | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.4V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 660pF @ 0V, 1MHz | |||
|
|
VIEW |
2,841
In-stock
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 12.5A TO220 | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 12.5A | 1.8V @ 8A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 0V, 1MHz | |||
|
VIEW |
1,899
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 475pF @ 0V, 1MHz | |||
|
|
VIEW |
3,788
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
|
VIEW |
3,563
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
|
|
VIEW |
660
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
|
|
VIEW |
625
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
|
VIEW |
3,203
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 15A (DC) | 1.75V @ 12A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 665pF @ 1V, 100kHz | |||
|
|
VIEW |
1,457
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 15A (DC) | 1.75V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | |||
|
|
VIEW |
3,035
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 13A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 13A (DC) | 1.75V @ 8A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 463pF @ 1V, 100kHz | |||
|
VIEW |
2,263
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 24A TO220-2 | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 24A (DC) | 1.35V @ 10A | 33µA @ 420V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 495pF @ 1V, 1MHz | |||
|
|
VIEW |
2,062
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 20A TO220-2 | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 20A (DC) | 1.35V @ 8A | 27µA @ 420V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 401pF @ 1V, 1MHz | |||
|
|
VIEW |
2,896
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8.8A (DC) | 1.75V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 361pF @ 1V, 100kHz | |||
|
|
VIEW |
2,085
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 35A (DC) | 1.7V @ 10A | 100µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1400pF @ 0V, 1MHz | |||
|
VIEW |
1,513
In-stock
|
Microsemi Corporation | UNRLS, FG, GEN2, SIC SBD, TO-220 | Active | - | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10kHz | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
3,731
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 25A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 25A (DC) | 1.75V @ 20A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | |||
|
|
VIEW |
3,572
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 16A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 16A (DC) | 1.75V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 887pF @ 1V, 100kHz | |||
|
|
VIEW |
3,297
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 8A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.75V @ 8A | 200µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 538pF @ 1V, 100kHz | |||
|
VIEW |
978
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 400µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 41pF @ 600V, 1MHz | |||
|
|
VIEW |
874
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 2A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 138pF @ 1V, 1MHz | |||
|
|
VIEW |
1,372
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 30A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.75V @ 30A | 200µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 1705pF @ 1V, 100kHz | |||
|
|
VIEW |
1,485
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 15A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 15A (DC) | 1.75V @ 15A | 200µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 936pF @ 1V, 100kHz | |||
|
|
VIEW |
1,334
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 612pF @ 1V, 100kHz | |||
|
|
VIEW |
2,871
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 34A TO220-2 | Active | - | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 34A (DC) | 1.35V @ 16A | 53µA @ 420V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 783pF @ 1V, 1MHz | |||
|
|
VIEW |
2,833
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
|
|
VIEW |
1,285
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 41A TO220-2 | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 41A (DC) | 1.35V @ 20A | 67µA @ 420V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 970pF @ 1V, 1MHz | |||
