Packaging :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
APT10SCE170B
RFQ
VIEW
RFQ
3,311
In-stock
Microsemi Corporation DIODE SCHOTTKY 1700V 10A TO247 - Obsolete - Through Hole TO-247-2 TO-247 Silicon Carbide Schottky 23A (DC) 1.8V @ 10A 200µA @ 1700V 1700V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1120pF @ 0V, 1MHz
APT10SCE120B
RFQ
VIEW
RFQ
1,098
In-stock
Microsemi Corporation DIODE SCHOTTKY 1200V 10A TO247 - Obsolete - Through Hole TO-247-2 TO-247 Silicon Carbide Schottky 43A (DC) 1.8V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 630pF @ 1V, 1MHz
APT60D30BG
RFQ
VIEW
RFQ
1,653
In-stock
Microsemi Corporation DIODE GEN PURP 300V 60A TO247 - Obsolete Tube Through Hole TO-247-2 TO-247 Standard 60A 1.4V @ 60A 250µA @ 300V 300V Fast Recovery = 200mA (Io) 38ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
3,259
In-stock
ON Semiconductor 1200V 10A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 17A (DC) 1.75V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 612pF @ 1V, 100kHz
DLA60I1200HA
RFQ
VIEW
RFQ
2,776
In-stock
IXYS DIODE GEN PURP 1200V 60A TO247AD - Active Tube Through Hole TO-247-2 TO-247AD Standard 60A 1.19V @ 60A 30µA @ 1200V 1200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 33pF @ 400V, 1MHz
APT30D40BG
RFQ
VIEW
RFQ
1,372
In-stock
Microsemi Corporation DIODE GEN PURP 400V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.5V @ 30A 250µA @ 400V 400V Fast Recovery = 200mA (Io) 32ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
3,760
In-stock
IXYS DIODE GEN PURP 1800V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 30A 1.25V @ 30A 40µA @ 1800V 1800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 10pF @ 400V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,886
In-stock
ON Semiconductor 1200V 40A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 61A (DC) - 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 2250pF @ 1V, 100kHz
APT100DL60BG
RFQ
VIEW
RFQ
3,878
In-stock
Microsemi Corporation DIODE GEN PURP 600V 100A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 100A 1.6V @ 100A - 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C -
APT15D60BG
RFQ
VIEW
RFQ
2,604
In-stock
Microsemi Corporation DIODE GEN PURP 600V 15A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 15A 1.8V @ 15A 150µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 175°C -
APT60D20BG
RFQ
VIEW
RFQ
2,091
In-stock
Microsemi Corporation DIODE GEN PURP 200V 60A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 60A 1.3V @ 60A 250µA @ 200V 200V Fast Recovery = 200mA (Io) 31ns -55°C ~ 175°C -
APT30D120BG
RFQ
VIEW
RFQ
1,643
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 30A 2.5V @ 30A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 370ns -55°C ~ 175°C -
APT60DQ120BG
RFQ
VIEW
RFQ
1,282
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 60A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 60A 3.3V @ 60A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 320ns -55°C ~ 175°C -
APT75DQ100BG
RFQ
VIEW
RFQ
2,630
In-stock
Microsemi Corporation DIODE GEN PURP 1KV 75A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 75A 3V @ 75A 100µA @ 1000V 1000V Fast Recovery = 200mA (Io) 250ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
2,549
In-stock
SMC Diode Solutions DIODE GEN PURP 600V 20A TO247AC - Active Tube Through Hole TO-247-2 TO-247AC Standard 20A 1.7V @ 20A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C -
GB50SLT12-247
RFQ
VIEW
RFQ
2,525
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 50A TO247AC - Active Tube Through Hole TO-247-2 TO-247AC Silicon Carbide Schottky 50A 1.8V @ 50A 1mA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 2940pF @ 1V, 1MHz
APT30D20BG
RFQ
VIEW
RFQ
3,541
In-stock
Microsemi Corporation DIODE GEN PURP 200V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.3V @ 30A 250µA @ 200V 200V Fast Recovery = 200mA (Io) 24ns -55°C ~ 175°C -
APT30D30BG
RFQ
VIEW
RFQ
932
In-stock
Microsemi Corporation DIODE GEN PURP 300V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.4V @ 30A 250µA @ 300V 300V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C -
APT30DQ120BG
RFQ
VIEW
RFQ
3,618
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 3.3V @ 30A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 320ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
1,398
In-stock
ON Semiconductor 1200V 50A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 77A (DC) - 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 2560pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
3,610
In-stock
ON Semiconductor 1200V 30A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 46A (DC) - 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1740pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
3,440
In-stock
ON Semiconductor 650V 50A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 60A (DC) 1.75V @ 50A 200µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 2530pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
1,854
In-stock
ON Semiconductor 650V 40A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 48A (DC) - 200µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1989pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
3,408
In-stock
ON Semiconductor 650V 30A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 26A (DC) - 200µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1705pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
2,798
In-stock
ON Semiconductor 1200V 15A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 26A (DC) 1.75V @ 15A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 936pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
3,576
In-stock
ON Semiconductor 650V 20A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 25A (DC) - 200µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1085pF @ 1V, 100kHz
APT75DQ120BG
RFQ
VIEW
RFQ
3,432
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 75A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 75A 3.1V @ 75A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 325ns -55°C ~ 175°C -
SDUR1560W
RFQ
VIEW
RFQ
2,942
In-stock
SMC Diode Solutions DIODE GEN PURP 600V TO247AC - Active Tube Through Hole TO-247-2 TO-247AC Standard - 1.7V @ 15A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C -
APT60D120BG
RFQ
VIEW
RFQ
1,671
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 60A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 60A 2.5V @ 60A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 400ns -55°C ~ 175°C -
APT40DQ120BG
RFQ
VIEW
RFQ
3,588
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 40A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 40A 3.3V @ 40A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 350ns -55°C ~ 175°C -