- Part Status :
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- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
3,447
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 8A ITO220AC | - | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 8A | 1.3V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 65ns | -55°C ~ 175°C | - | |||
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VIEW |
3,569
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 12A ITO220AC | - | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 12A | 3.1V @ 12A | 500nA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | - | |||
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VIEW |
2,173
In-stock
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Infineon Technologies | DIODE GEN PURP 600V 21A TO22FP | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | Standard | 21A | 2.05V @ 30A | 40µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 130ns | -55°C ~ 175°C | - | |||
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VIEW |
893
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | |||
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VIEW |
1,541
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | |||
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VIEW |
1,476
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
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VIEW |
1,155
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 430pF @ 0V, 1MHz | |||
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VIEW |
3,301
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 430pF @ 0V, 1MHz | |||
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VIEW |
2,268
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 0V, 1MHz | |||
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VIEW |
1,559
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 0V, 1MHz | |||
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VIEW |
3,433
In-stock
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ON Semiconductor | 650V 20A SIC SBD | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Silicon Carbide Schottky | 20A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | |||
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VIEW |
947
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
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VIEW |
2,689
In-stock
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ON Semiconductor | 650V 10A SIC SBD | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Silicon Carbide Schottky | 10A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | |||
|
VIEW |
964
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | - | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220FP | Silicon Carbide Schottky | 300mA | 1.7V @ 300mA | 5µA @ 3300V | 3300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 42pF @ 1V, 1MHz | |||
