Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction
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APT15DQ100BG
RFQ
VIEW
RFQ
3,480
In-stock
Microsemi Corporation DIODE GEN PURP 1KV 15A TO247 - Active Tube Through Hole TO-247-3 TO-247 [B] Standard 15A 3V @ 15A 100µA @ 1000V 1000V Fast Recovery = 200mA (Io) 235ns -55°C ~ 175°C
APT15DQ120BG
RFQ
VIEW
RFQ
3,486
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 15A TO247 - Active Tube Through Hole TO-247-3 TO-247 [B] Standard 15A 3.3V @ 15A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 240ns -55°C ~ 175°C
VS-60APU04PBF
RFQ
VIEW
RFQ
966
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 60A TO247AC - Active Tube Through Hole TO-247-3 TO-247AC Standard 60A 1.25V @ 60A 50µA @ 400V 400V Fast Recovery = 200mA (Io) 85ns -55°C ~ 175°C
APT15DQ60BG
RFQ
VIEW
RFQ
1,397
In-stock
Microsemi Corporation DIODE GEN PURP 600V 15A TO247 - Active Tube Through Hole TO-247-3 TO-247 [B] Standard 15A 2.4V @ 15A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 19ns -55°C ~ 175°C
IDW75E60FKSA1
RFQ
VIEW
RFQ
2,207
In-stock
Infineon Technologies DIODE GEN PURP 600V 120A TO247-3 - Active Tube Through Hole TO-247-3 PG-TO247-3 Standard 120A (DC) 2V @ 75A 40µA @ 600V 600V Fast Recovery = 200mA (Io) 121ns -55°C ~ 175°C
IDW100E60FKSA1
RFQ
VIEW
RFQ
2,349
In-stock
Infineon Technologies DIODE GEN PURP 600V 150A TO247-3 - Active Tube Through Hole TO-247-3 PG-TO247-3 Standard 150A (DC) 2V @ 100A 40µA @ 600V 600V Fast Recovery = 200mA (Io) 120ns -55°C ~ 175°C