Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction
GLOBAL STOCKS
APT15DQ60BG
RFQ
VIEW
RFQ
1,397
In-stock
Microsemi Corporation DIODE GEN PURP 600V 15A TO247 - Active Tube Through Hole TO-247-3 TO-247 [B] Standard 15A 2.4V @ 15A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 19ns -55°C ~ 175°C
APT60DQ60BG
RFQ
VIEW
RFQ
1,562
In-stock
Microsemi Corporation DIODE GEN PURP 600V 60A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 60A 2.4V @ 60A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 175°C
APT30DQ60BG
RFQ
VIEW
RFQ
2,141
In-stock
Microsemi Corporation DIODE GEN PURP 600V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 2.4V @ 30A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -55°C ~ 175°C
APT60D60BG
RFQ
VIEW
RFQ
3,894
In-stock
Microsemi Corporation DIODE GEN PURP 600V 60A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 60A 1.8V @ 60A 250µA @ 600V 600V Fast Recovery = 200mA (Io) 130ns -55°C ~ 175°C
APT75DQ60BG
RFQ
VIEW
RFQ
2,968
In-stock
Microsemi Corporation DIODE GEN PURP 600V 75A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 75A 2.5V @ 75A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 31ns -55°C ~ 175°C
APT30D60BG
RFQ
VIEW
RFQ
1,709
In-stock
Microsemi Corporation DIODE GEN PURP 600V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.8V @ 30A 250µA @ 600V 600V Fast Recovery = 200mA (Io) 85ns -55°C ~ 175°C
APT40DQ60BG
RFQ
VIEW
RFQ
2,520
In-stock
Microsemi Corporation DIODE GEN PURP 600V 40A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 40A 2.4V @ 40A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C