- Part Status :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
- Applied Filters :
9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
3,792
In-stock
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WeEn Semiconductors | DIODE GEN PURP 600V 30A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Standard | 30A | 2.75V @ 30A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 22ns | 175°C (Max) | - | |||
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VIEW |
3,054
In-stock
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STMicroelectronics | DIODE GEN PURP 400V 60A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Standard | 60A | 1.35V @ 60A | 20µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 55ns | 175°C (Max) | - | |||
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VIEW |
2,193
In-stock
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Rohm Semiconductor | DIODE SILICON 650V 20A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 20A | 1.55V @ 20A | 400µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 730pF @ 1V, 1MHz | |||
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VIEW |
1,381
In-stock
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Littelfuse Inc. | DIODE SIC SCHOTKY 650V 20A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247AD | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 500µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 580pF @ 1V, 1MHz | |||
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VIEW |
677
In-stock
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Littelfuse Inc. | DIODE SIC SCHOTKY 650V 16A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247AD | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 460µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 520pF @ 1V, 1MHz | |||
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VIEW |
1,066
In-stock
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Rohm Semiconductor | DIODE SILICON 650V 15A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 15A | 1.55V @ 15A | 300µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 550pF @ 1V, 1MHz | |||
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VIEW |
1,445
In-stock
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STMicroelectronics | DIODE GEN PURP 300V 60A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Standard | 60A | 1.5V @ 30A | 100µA @ 300V | 300V | Fast Recovery = 200mA (Io) | - | 175°C (Max) | - | |||
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VIEW |
882
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 1200V 10A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 10A (DC) | - | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | - | |||
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VIEW |
2,541
In-stock
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STMicroelectronics | DIODE GEN PURP 600V 50A TO247 | - | Obsolete | Tube | Through Hole | TO-247-3 | TO-247 | Standard | 50A | 2.4V @ 50A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | 175°C (Max) | - |