Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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UF5408-E3/73
RFQ
VIEW
RFQ
2,288
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 36pF @ 4V, 1MHz
UF4007-E3/73
RFQ
VIEW
RFQ
2,960
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 1A DO204AL - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.7V @ 1A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 17pF @ 4V, 1MHz
UF4007-M3/73
RFQ
VIEW
RFQ
1,226
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 1A DO204AL - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.7V @ 1A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 17pF @ 4V, 1MHz
STTH110
RFQ
VIEW
RFQ
1,696
In-stock
STMicroelectronics DIODE GEN PURP 1KV 1A DO41 - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.7V @ 1A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns 175°C (Max) -
HER308G A0G
RFQ
VIEW
RFQ
605
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 35pF @ 4V, 1MHz
STTH310
RFQ
VIEW
RFQ
2,087
In-stock
STMicroelectronics DIODE GEN PURP 1KV 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -40°C ~ 175°C -