Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RS3MHM6G
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RFQ
933
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Taiwan Semiconductor Corporation DIODE GEN PURP 3A DO214AB Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.3V @ 3A 10µA @ 1000V - Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C -
RS3M R7G
RFQ
VIEW
RFQ
734
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 3A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.3V @ 3A 10µA @ 1000V - Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C -
HS3M M6G
RFQ
VIEW
RFQ
608
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 3A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.7V @ 3A 10µA @ 1000V - Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 50pF @ 4V, 1MHz
HS5M M6G
RFQ
VIEW
RFQ
1,122
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 5A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 5A 1.7V @ 5A 10µA @ 1000V - Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 50pF @ 4V, 1MHz
RS3MHR7G
RFQ
VIEW
RFQ
3,751
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 3A DO214AB Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.3V @ 3A 10µA @ 1000V - Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C -
HS3M R7G
RFQ
VIEW
RFQ
2,028
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.7V @ 3A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 50pF @ 4V, 1MHz
S3M R7G
RFQ
VIEW
RFQ
3,274
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.15V @ 3A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
HS5M R7G
RFQ
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RFQ
3,601
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 5A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 5A 1.7V @ 5A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 50pF @ 4V, 1MHz
HS5M V7G
RFQ
VIEW
RFQ
1,070
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 5A DO214AB - Active Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 5A 1.7V @ 5A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 50pF @ 4V, 1MHz
S4M R7G
RFQ
VIEW
RFQ
2,423
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 4A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 4A 1.15V @ 4A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
RS3M M6G
RFQ
VIEW
RFQ
3,846
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 3A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.3V @ 3A 10µA @ 1000V - Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C -
S8MC R7G
RFQ
VIEW
RFQ
3,617
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 8A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 8A 985mV @ 8A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 48pF @ 4V, 1MHz
FR10M-TP
RFQ
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RFQ
2,890
In-stock
Micro Commercial Co DIODE GEN PURP 1KV 10A DO214AB - Active Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 10A 1.3V @ 10A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C -
HS3M V7G
RFQ
VIEW
RFQ
1,381
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AB - Active Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.7V @ 3A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 50pF @ 4V, 1MHz