- Part Status :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
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26 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,368
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -50°C ~ 125°C | 28pF @ 4V, 1MHz | |||
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VIEW |
2,860
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | - | |||
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VIEW |
1,218
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 5A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 1.35V @ 5A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 125°C | 28pF @ 4V, 1MHz | |||
|
VIEW |
3,493
In-stock
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STMicroelectronics | DIODE GEN PURP 400V 3A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.5V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | 175°C (Max) | - | |||
|
VIEW |
2,529
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.3V @ 4A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
2,647
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.25V @ 3A | 20µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 30ns | -40°C ~ 150°C | - | |||
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|
VIEW |
2,997
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,674
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | SUPERECTIFIER® | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | - | |||
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|
VIEW |
1,243
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
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|
VIEW |
817
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
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|
VIEW |
1,804
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 1.55V @ 5A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 175°C | - | |||
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|
VIEW |
3,334
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.25V @ 3A | 20µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 30ns | -40°C ~ 150°C | - | |||
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|
VIEW |
1,363
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
2,241
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
955
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
1,519
In-stock
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STMicroelectronics | DIODE GEN PURP 400V 3A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.5V @ 3A | 20µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 55ns | 150°C (Max) | - | |||
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|
VIEW |
3,138
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 5A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 1.55V @ 5A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 175°C | - | |||
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|
VIEW |
3,647
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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|
VIEW |
844
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
1,556
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,777
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,680
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
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|
VIEW |
3,950
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
2,581
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
1,921
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.3V @ 4A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
2,624
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 20µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -40°C ~ 150°C | - | |||
