Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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MUR440RL
RFQ
VIEW
RFQ
1,748
In-stock
ON Semiconductor DIODE GEN PURP 400V 4A DO201AD SWITCHMODE™ Obsolete Tape & Reel (TR) Through Hole DO-201AA, DO-27, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -
MUR440
RFQ
VIEW
RFQ
3,394
In-stock
ON Semiconductor DIODE GEN PURP 400V 4A DO201AD SWITCHMODE™ Obsolete Bulk Through Hole DO-201AA, DO-27, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -
MUR440-E3/73
RFQ
VIEW
RFQ
1,243
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -
MUR440-M3/54
RFQ
VIEW
RFQ
2,253
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -
MUR440-M3/73
RFQ
VIEW
RFQ
817
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -
MUR4L40 B0G
RFQ
VIEW
RFQ
2,874
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440 B0G
RFQ
VIEW
RFQ
3,284
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440 A0G
RFQ
VIEW
RFQ
2,241
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L40 R0G
RFQ
VIEW
RFQ
3,479
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440 R0G
RFQ
VIEW
RFQ
2,170
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L40 A0G
RFQ
VIEW
RFQ
955
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440-E3/54
RFQ
VIEW
RFQ
1,644
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 4A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -
MUR440-E3/54
RFQ
VIEW
RFQ
1,010
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -
MUR4L40HB0G
RFQ
VIEW
RFQ
3,899
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440HB0G
RFQ
VIEW
RFQ
1,991
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L40HA0G
RFQ
VIEW
RFQ
3,950
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440HA0G
RFQ
VIEW
RFQ
2,581
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L40HR0G
RFQ
VIEW
RFQ
1,823
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440HR0G
RFQ
VIEW
RFQ
3,208
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440RLG
RFQ
VIEW
RFQ
2,774
In-stock
ON Semiconductor DIODE GEN PURP 400V 4A AXIAL SWITCHMODE™ Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -
MUR440RLG
RFQ
VIEW
RFQ
1,204
In-stock
ON Semiconductor DIODE GEN PURP 400V 4A AXIAL SWITCHMODE™ Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -
MUR440G
RFQ
VIEW
RFQ
2,184
In-stock
ON Semiconductor DIODE GEN PURP 400V 4A AXIAL SWITCHMODE™ Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -