Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
1,229
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 9A TO220AB - Active - Through Hole TO-220-3 TO-220AB Standard 9A 1.3V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns 175°C (Max) -
SF1608GHC0G
RFQ
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RFQ
1,972
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF2008GHC0G
RFQ
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RFQ
3,707
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.7V @ 10A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF1608G C0G
RFQ
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RFQ
1,283
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A TO220AB - Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF2008G C0G
RFQ
VIEW
RFQ
715
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 20A TO220AB - Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.7V @ 10A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF1008GHC0G
RFQ
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RFQ
2,030
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 10A 1.7V @ 5A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF808G C0G
RFQ
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RFQ
2,188
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AB - Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
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RFQ
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RFQ
1,952
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 15A TO220AC HEXFRED® Active - Through Hole TO-220-3 TO-220AB Standard 15A (DC) 2V @ 30A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 60ns -55°C ~ 150°C -
SF808GHC0G
RFQ
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RFQ
2,644
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF1008G C0G
RFQ
VIEW
RFQ
683
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A TO220AB - Active Tube Through Hole TO-220-3 TO-220AB Standard 10A 1.7V @ 5A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
VS-HFA08TA60C-N3
RFQ
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RFQ
2,030
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 4A TO220AB HEXFRED® Last Time Buy Tube Through Hole TO-220-3 TO-220AB Standard 4A 1.8V @ 4A 3µA @ 600V 600V Fast Recovery = 200mA (Io) 155ns -55°C ~ 150°C -