- Series :
- Packaging :
- Current - Reverse Leakage @ Vr :
- Applied Filters :
24 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,474
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,476
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
974
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,366
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,744
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,237
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
2,021
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
2,521
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
2,296
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,844
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
3,547
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
3,736
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,925
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,916
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,062
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,378
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,219
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
3,117
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
2,067
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
3,796
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
3,810
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
3,795
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
2,246
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
632
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz |