Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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1N5400-E3/51
RFQ
VIEW
RFQ
1,107
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 3A DO201AD - Obsolete Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 30pF @ 4V, 1MHz
UF3001
RFQ
VIEW
RFQ
2,221
In-stock
Diodes Incorporated DIODE GEN PURP 50V 3A DO201AD - Discontinued at Digi-Key Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C 75pF @ 4V, 1MHz
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RFQ
VIEW
RFQ
3,012
In-stock
Diodes Incorporated DIODE GEN PURP 50V 3A DO201AD - Obsolete Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 150°C 75pF @ 4V, 1MHz
SF61GHB0G
RFQ
VIEW
RFQ
2,264
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF31GHB0G
RFQ
VIEW
RFQ
3,020
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF61G B0G
RFQ
VIEW
RFQ
1,820
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF41G B0G
RFQ
VIEW
RFQ
1,101
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF31G B0G
RFQ
VIEW
RFQ
3,875
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
FR301G B0G
RFQ
VIEW
RFQ
3,752
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 30pF @ 4V, 1MHz
1N5400GHB0G
RFQ
VIEW
RFQ
1,322
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
SF41GHB0G
RFQ
VIEW
RFQ
1,687
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
1N5400G B0G
RFQ
VIEW
RFQ
1,659
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz