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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,231
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 2A DO204AC | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 150°C | 70pF @ 4V, 1MHz | |||
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VIEW |
2,794
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
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VIEW |
1,592
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
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VIEW |
1,632
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 2A DO204AC | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
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VIEW |
1,107
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 2A DO204AC | SUPERECTIFIER® | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 150°C | 70pF @ 4V, 1MHz | |||
