- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.07V @ 3A (1)
- 1.1V @ 1.5A (1)
- 1.1V @ 1A (7)
- 1.1V @ 2A (1)
- 1.1V @ 3.5A (1)
- 1.1V @ 3A (1)
- 1.1V @ 6A (1)
- 1.2V @ 1A (1)
- 1.2V @ 3A (1)
- 1.3V @ 1.5A (1)
- 1.3V @ 1A (3)
- 1.3V @ 2A (1)
- 1.3V @ 3A (1)
- 1V @ 1.5A (1)
- 1V @ 1A (9)
- 1V @ 2A (1)
- 1V @ 3A (4)
- 1V @ 4A (1)
- 1V @ 6A (1)
- 700mV @ 1A (3)
- 700mV @ 2A (1)
- 700mV @ 3A (1)
- 700mV @ 500mA (1)
- 700mV @ 5A (1)
- 700mV @ 8A (1)
- 950mV @ 1A (5)
- 950mV @ 2A (2)
- 950mV @ 3A (1)
- 950mV @ 4A (2)
- 950mV @ 600mA (2)
- 975mV @ 6A (1)
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
- Applied Filters :
59 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,855
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
VIEW |
1,077
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 50V 8A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 8A | 700mV @ 8A | 500µA @ 50V | 50V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
VIEW |
1,209
In-stock
|
Comchip Technology | DIODE GEN PURP 50V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | |||
|
VIEW |
3,341
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 50V 5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 5A | 700mV @ 5A | 500µA @ 50V | 50V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
VIEW |
742
In-stock
|
Comchip Technology | DIODE GEN PURP 50V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | |||
|
VIEW |
3,364
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
|
VIEW |
3,749
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
2,200
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 3A | 700mV @ 3A | 500µA @ 50V | 50V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
VIEW |
3,796
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,366
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | 7pF @ 4V, 1MHz | |||
|
VIEW |
1,474
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,320
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,691
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3.5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3.5A | 1.1V @ 3.5A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
619
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
2,268
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
|
VIEW |
2,427
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
2,738
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 50V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Schottky | 2A | 700mV @ 2A | 500µA @ 50V | 50V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
VIEW |
2,176
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 1.3V @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
VIEW |
2,794
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
|
VIEW |
2,657
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 1.07V @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
3,640
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
VIEW |
2,517
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
|
VIEW |
3,640
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
|
VIEW |
2,949
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | |||
|
VIEW |
2,471
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
VIEW |
1,260
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
VIEW |
1,236
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 1V @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | |||
|
VIEW |
2,716
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,109
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
2,201
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz |