Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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FES8ATHE3/45
RFQ
VIEW
RFQ
2,289
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 8A TO220AC - Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
FESB8AT-E3/81
RFQ
VIEW
RFQ
1,220
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 8A TO263AB - Active Tape & Reel (TR) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
SFAF801GHC0G
RFQ
VIEW
RFQ
1,183
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 8A ITO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 90pF @ 4V, 1MHz
SFAS801GHMNG
RFQ
VIEW
RFQ
1,481
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 8A TO263AB Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
FESF8ATHE3/45
RFQ
VIEW
RFQ
860
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack, Isolated Tab ITO-220AC Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
FES8AT-E3/45
RFQ
VIEW
RFQ
3,394
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
SFAF801G C0G
RFQ
VIEW
RFQ
1,636
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 90pF @ 4V, 1MHz
SFAS801G MNG
RFQ
VIEW
RFQ
2,284
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 8A TO263AB - Active Tape & Reel (TR) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
FES16ATR
RFQ
VIEW
RFQ
2,334
In-stock
ON Semiconductor DIODE GEN PURP 50V 16A TO220AC - Obsolete Tape & Reel (TR) Through Hole TO-220-2 TO-220AC Standard 16A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 150°C 170pF @ 4V, 1MHz
FES16AT
RFQ
VIEW
RFQ
800
In-stock
ON Semiconductor DIODE GEN PURP 50V 16A TO220AC - Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 16A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 150°C 170pF @ 4V, 1MHz
FESB8ATHE3/81
RFQ
VIEW
RFQ
1,916
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 8A TO263AB - Active Tape & Reel (TR) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
SF1601PTHC0G
RFQ
VIEW
RFQ
699
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A TO247AD Automotive, AEC-Q101 Active Tube Through Hole TO-247-3 TO-247AD (TO-3P) Standard 16A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 85pF @ 4V, 1MHz
FESF8AT-E3/45
RFQ
VIEW
RFQ
2,231
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack, Isolated Tab ITO-220AC Standard 8A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
SF1601PT C0G
RFQ
VIEW
RFQ
1,818
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A TO247AD - Active Tube Through Hole TO-247-3 TO-247AD (TO-3P) Standard 16A 950mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 85pF @ 4V, 1MHz