- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
2,642
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
1,505
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
3,194
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 1.1V @ 1A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 175°C | 9pF @ 4V, 1MHz | |||
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VIEW |
1,987
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
702
In-stock
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 50V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Schottky | 1A | 700mV @ 1A | 400µA @ 50V | 50V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - |