- Series :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
15 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,570
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
2,296
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
VIEW |
3,735
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 50V 4A SOD64 | - | Active | Tape & Box (TB) | Through Hole | SOD-64, Axial | SOD-64 | Avalanche | 4A | 1.1V @ 5A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
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VIEW |
3,749
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
1,474
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,744
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
2,296
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
3,223
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
619
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
3,640
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
VIEW |
2,716
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,592
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
|
VIEW |
1,378
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,632
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 2A DO204AC | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
|
VIEW |
2,701
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz |