Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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1N4933GP-E3/73
RFQ
VIEW
RFQ
1,690
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO204AL SUPERECTIFIER® Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -65°C ~ 175°C 15pF @ 4V, 1MHz
1N4933GP-E3/54
RFQ
VIEW
RFQ
3,088
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO204AL SUPERECTIFIER® Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -65°C ~ 175°C 15pF @ 4V, 1MHz
1N4933GHB0G
RFQ
VIEW
RFQ
1,015
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4933GHA0G
RFQ
VIEW
RFQ
1,730
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4933G B0G
RFQ
VIEW
RFQ
3,708
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4933G A0G
RFQ
VIEW
RFQ
3,379
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4933-E3/73
RFQ
VIEW
RFQ
2,004
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO204AL - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 12pF @ 4V, 1MHz
1N4933GHR0G
RFQ
VIEW
RFQ
2,636
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4933GHR1G
RFQ
VIEW
RFQ
3,926
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4933G R0G
RFQ
VIEW
RFQ
1,369
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL - Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4933G R1G
RFQ
VIEW
RFQ
2,612
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL - Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4933-E3/54
RFQ
VIEW
RFQ
3,031
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO204AL - Active Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 12pF @ 4V, 1MHz
1N4933-E3/54
RFQ
VIEW
RFQ
1,534
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO204AL - Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 12pF @ 4V, 1MHz