Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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1,474
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
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RFQ
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RFQ
1,744
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
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RFQ
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RFQ
2,296
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
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RFQ
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RFQ
1,925
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
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RFQ
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RFQ
1,484
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 600MA TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 600mA 950mV @ 600mA 5µA @ 50V 50V Fast Recovery = 200mA (Io) 15ns -55°C ~ 150°C 9pF @ 4V, 1MHz
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RFQ
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RFQ
1,297
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 600MA TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 600mA 950mV @ 600mA 5µA @ 50V 50V Fast Recovery = 200mA (Io) 15ns -55°C ~ 150°C 9pF @ 4V, 1MHz
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RFQ
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RFQ
2,351
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 600MA TS-1 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Standard 600mA 950mV @ 600mA 5µA @ 50V 50V Fast Recovery = 200mA (Io) 15ns -55°C ~ 150°C 9pF @ 4V, 1MHz
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RFQ
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RFQ
3,215
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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RFQ
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RFQ
2,471
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 600MA TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 600mA 950mV @ 600mA 5µA @ 50V 50V Fast Recovery = 200mA (Io) 15ns -55°C ~ 150°C 9pF @ 4V, 1MHz
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RFQ
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RFQ
1,260
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 600MA TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 600mA 950mV @ 600mA 5µA @ 50V 50V Fast Recovery = 200mA (Io) 15ns -55°C ~ 150°C 9pF @ 4V, 1MHz
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RFQ
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RFQ
1,423
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 600MA TS-1 - Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Standard 600mA 950mV @ 600mA 5µA @ 50V 50V Fast Recovery = 200mA (Io) 15ns -55°C ~ 150°C 9pF @ 4V, 1MHz
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RFQ
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RFQ
1,109
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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RFQ
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RFQ
2,201
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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RFQ
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RFQ
1,378
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
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RFQ
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RFQ
2,165
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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RFQ
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RFQ
654
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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RFQ
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RFQ
895
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Schottky 1A 700mV @ 1A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
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RFQ
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RFQ
1,261
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Schottky 1A 700mV @ 1A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
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RFQ
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RFQ
3,148
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 1A TS-1 - Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Schottky 1A 700mV @ 1A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
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RFQ
VIEW
RFQ
2,325
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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RFQ
VIEW
RFQ
1,891
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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RFQ
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RFQ
628
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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RFQ
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RFQ
1,824
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.1V @ 1A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 10pF @ 4V, 1MHz
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RFQ
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RFQ
1,613
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Standard 1A 1.1V @ 1A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 10pF @ 4V, 1MHz
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RFQ
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RFQ
3,532
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.1V @ 1A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 10pF @ 4V, 1MHz
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RFQ
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RFQ
1,009
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Schottky 1A 700mV @ 1A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
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RFQ
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RFQ
2,644
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Schottky 1A 700mV @ 1A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
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RFQ
VIEW
RFQ
2,228
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 1A TS-1 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Schottky 1A 700mV @ 1A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
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RFQ
VIEW
RFQ
632
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
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RFQ
VIEW
RFQ
2,726
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Reel (TR) Through Hole T-18, Axial TS-1 Standard 1A 1V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 15pF @ 4V, 1MHz