Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Operating Temperature - Junction Capacitance @ Vr, F
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1,028
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 60pF @ 4V, 1MHz
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707
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
1,730
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
3,636
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
876
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
800
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Tape & Box (TB) Through Hole - R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 60pF @ 4V, 1MHz