- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.1V @ 3.5A (3)
- 1.1V @ 3A (9)
- 1.1V @ 9.4A (3)
- 1.25V @ 3A (3)
- 1.2V @ 3A (7)
- 1.3V @ 2.5A (1)
- 1.3V @ 3A (6)
- 1.85V @ 4A (1)
- 1V @ 3A (10)
- 1V @ 4A (7)
- 1V @ 6A (2)
- 790mV @ 3A (4)
- 800mV @ 3A (4)
- 800mV @ 5A (5)
- 850mV @ 3A (13)
- 850mV @ 5A (18)
- 920mV @ 8A (6)
- 950mV @ 3A (13)
- 950mV @ 4A (4)
- 960mV @ 5A (2)
- 975mV @ 6A (6)
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 100pF @ 4V, 1MHz (12)
- 117pF @ 4V, 1MHz (4)
- 150pF @ 4V, 1MHz (2)
- 180pF @ 4V, 1MHz (2)
- 200pF @ 4V, 1MHz (3)
- 20pF @ 4V, 1MHz (7)
- 250pF @ 4V, 1MHz (3)
- 250pF @ 5V, 1MHz (4)
- 25pF @ 4V, 1MHz (6)
- 28pF @ 4V, 1MHz (3)
- 30pF @ 0V, 1MHz (1)
- 30pF @ 4V, 1MHz (6)
- 380pF @ 4V, 1MHz (2)
- 400pF @ 4V, 1MHz (2)
- 40pF @ 4V, 1MHz (3)
- 45pF @ 4V, 1MHz (3)
- 500pF @ 4V, 1MHz (2)
- 50pF @ 4V, 1MHz (4)
- 60pF @ 4V, 1MHz (5)
- 75pF @ 4V, 1MHz (1)
- 80pF @ 4V, 1MHz (7)
- 95pF @ 4V, 1MHz (2)
- Applied Filters :
127 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
1,406
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 8A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 8A | 920mV @ 8A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
VIEW |
1,356
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 8A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 8A | 920mV @ 8A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
VIEW |
2,106
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 8A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 8A | 920mV @ 8A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
VIEW |
2,654
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | SUPERECTIFIER® | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | - | ||||
VIEW |
930
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 2.5A DO201AD | SUPERECTIFIER® | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 2.5A | 1.3V @ 2.5A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | 60pF @ 4V, 1MHz | ||||
VIEW |
607
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
1,047
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
1,035
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
1,156
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
670
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,315
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
1,809
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 5A DO201AD | SUPERECTIFIER® | Active | - | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 960mV @ 5A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 175°C | 117pF @ 4V, 1MHz | ||||
VIEW |
898
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 5A DO201AD | SUPERECTIFIER® | Active | - | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 960mV @ 5A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 175°C | 117pF @ 4V, 1MHz | ||||
VIEW |
3,651
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | SUPERECTIFIER® | Active | - | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 1µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 175°C | 117pF @ 4V, 1MHz | ||||
VIEW |
2,302
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | SUPERECTIFIER® | Active | - | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 1µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 175°C | 117pF @ 4V, 1MHz | ||||
VIEW |
3,373
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,959
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,410
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,940
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,713
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | SUPERECTIFIER® | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | - | ||||
VIEW |
3,909
In-stock
|
Micro Commercial Co | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
3,947
In-stock
|
Micro Commercial Co | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.85V @ 4A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | ||||
VIEW |
1,708
In-stock
|
Comchip Technology | DIODE SCHOTTKY 100V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 3A | 850mV @ 3A | 500µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -65°C ~ 150°C | 250pF @ 4V, 1MHz | ||||
VIEW |
2,119
In-stock
|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 5A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 5A | 800mV @ 5A | 200µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | 175°C (Max) | - | ||||
VIEW |
1,556
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 8A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 8A | 920mV @ 8A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
VIEW |
1,733
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 8A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 8A | 920mV @ 8A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
VIEW |
3,077
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 8A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 8A | 920mV @ 8A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
VIEW |
2,597
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | ||||
VIEW |
3,157
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
2,513
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz |