Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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UF1DLW RVG
RFQ
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RFQ
2,396
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Cut Tape (CT) Surface Mount SOD-123W SOD123W Standard 1A 950mV @ 1A 1µA @ 200V 200V Fast Recovery = 200mA (Io) 20ns -55°C ~ 150°C 40pF @ 4V, 1MHz
ES3D V7G
RFQ
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RFQ
3,463
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AB - Active Cut Tape (CT) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 900mV @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 20ns -55°C ~ 150°C 45pF @ 4V, 1MHz
U3D-E3/9AT
RFQ
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RFQ
3,648
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 2A DO214AB - Active Cut Tape (CT) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 2A 900mV @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 20ns -55°C ~ 150°C -
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RFQ
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RFQ
1,614
In-stock
Comchip Technology DIODE GEN PURP 200V 3A DO214AB Automotive, AEC-Q101 Active Cut Tape (CT) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 900mV @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 20ns -55°C ~ 150°C 40pF @ 4V, 1MHz
UF1DLWHRVG
RFQ
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RFQ
3,579
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W - Active Cut Tape (CT) Surface Mount SOD-123W SOD123W Standard 1A 950mV @ 1A 1µA @ 200V 200V Fast Recovery = 200mA (Io) 20ns -55°C ~ 150°C 40pF @ 4V, 1MHz
SBYV28-200-E3/54
RFQ
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RFQ
772
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3.5A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3.5A 1.1V @ 3.5A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 20ns -55°C ~ 150°C 20pF @ 4V, 1MHz