- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Applied Filters :
11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
3,620
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A TO277A | Automotive, AEC-Q101 | Obsolete | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.05V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 80pF @ 4V, 1MHz | ||||
VIEW |
681
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A TO277A | Automotive, AEC-Q101 | Obsolete | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.05V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 80pF @ 4V, 1MHz | ||||
VIEW |
1,015
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A TO277A | Automotive, AEC-Q101 | Obsolete | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 6A | 1.05V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 140ns | -55°C ~ 175°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,739
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 20A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 975mV @ 10A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
3,616
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 16A TO263AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 16A | 975mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,414
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 16A ITO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Standard | 16A | 975mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
3,814
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 8A TO263AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 8A | 950mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
1,300
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
3,764
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
1,899
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
3,854
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 16A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 16A | 975mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz |