Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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S6D
RFQ
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RFQ
3,438
In-stock
GeneSiC Semiconductor DIODE GEN PURP 200V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard 6A 1.1V @ 6A 10µA @ 100V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
VS-6F20
RFQ
VIEW
RFQ
2,036
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A DO203AA - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-203AA Standard 6A 1.1V @ 19A 12mA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
VS-1N3881R
RFQ
VIEW
RFQ
957
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A DO203AA - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-203AA Standard 6A 1.4V @ 6A 15µA @ 200V 200V Fast Recovery = 200mA (Io) 300ns -65°C ~ 150°C -
VS-1N3881
RFQ
VIEW
RFQ
1,200
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A DO203AA - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-203AA Standard 6A 1.4V @ 6A 15µA @ 200V 200V Fast Recovery = 200mA (Io) 300ns -65°C ~ 150°C -
VS-6FR20
RFQ
VIEW
RFQ
3,624
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A DO203AA - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-203AA Standard 6A 1.1V @ 19A 12mA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
SF64GHB0G
RFQ
VIEW
RFQ
2,817
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF64GHA0G
RFQ
VIEW
RFQ
2,106
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF64GHR0G
RFQ
VIEW
RFQ
1,993
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,083
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
731
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
3,105
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF64G B0G
RFQ
VIEW
RFQ
2,147
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF64G R0G
RFQ
VIEW
RFQ
1,970
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
PR6003-T
RFQ
VIEW
RFQ
1,901
In-stock
Diodes Incorporated DIODE GEN PURP 200V 6A R6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.2V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 150°C 140pF @ 4V, 1MHz
VS-6ESH02HM3/87A
RFQ
VIEW
RFQ
2,234
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A TO277A Automotive, AEC-Q101, FRED Pt® Active Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Standard 6A 940mV @ 6A 2µA @ 200V 200V Fast Recovery = 200mA (Io) 22ns -65°C ~ 175°C -
FR603
RFQ
VIEW
RFQ
3,208
In-stock
SMC Diode Solutions DIODE GEN PURP 200V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.2V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 125°C 100pF @ 4V, 1MHz
VS-6ESH02-M3/87A
RFQ
VIEW
RFQ
1,559
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A TO277A FRED Pt® Active Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Standard 6A 940mV @ 6A 2µA @ 200V 200V Fast Recovery = 200mA (Io) 22ns -65°C ~ 175°C -
60S2-TP
RFQ
VIEW
RFQ
3,073
In-stock
Micro Commercial Co DIODE GEN PURP 200V 6A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1V @ 6A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
629
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,407
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
603
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,744
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
985
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
3,956
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
6A2TA
RFQ
VIEW
RFQ
3,567
In-stock
SMC Diode Solutions DIODE GEN PURP 200V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 950mV @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C 150pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,254
In-stock
GeneSiC Semiconductor DIODE GEN PURP 200V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard 6A 1.4V @ 6A 25µA @ 50V 200V Fast Recovery = 200mA (Io) 200ns -65°C ~ 150°C -
VS-6FL20S02
RFQ
VIEW
RFQ
3,587
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A DO203AA - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-203AA Standard 6A 1.4V @ 6A 50µA @ 200V 200V Fast Recovery = 200mA (Io) 200ns -65°C ~ 150°C -
SF64G A0G
RFQ
VIEW
RFQ
3,116
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF64G A0G
RFQ
VIEW
RFQ
3,435
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
GI752-E3/73
RFQ
VIEW
RFQ
1,646
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A P600 - Active Tape & Box (TB) Through Hole P600, Axial P600 Standard 6A 900mV @ 6A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2.5µs -50°C ~ 150°C 150pF @ 4V, 1MHz