- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
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25 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
3,896
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A | Automotive, AEC-Q101 | Obsolete | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 5µs | -65°C ~ 175°C | 40pF @ 4V, 1MHz | ||||
VIEW |
2,466
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A | Automotive, AEC-Q101 | Obsolete | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 5µs | -65°C ~ 175°C | 40pF @ 4V, 1MHz | ||||
VIEW |
1,838
In-stock
|
Semtech Corporation | DIODE GEN PURP 200V 5A AXIAL | Automotive, AEC-Q101 | Active | Bulk | Through Hole | Axial | Axial | Standard | 5A | 1V @ 3A | 1µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2µs | - | 92pF @ 5V, 1MHz | ||||
VIEW |
2,817
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
680
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
1,300
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
1,094
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 2A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 1µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | ||||
VIEW |
1,947
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 200V 2A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Schottky | 2A | 950mV @ 2A | 100µA @ 200V | 200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
VIEW |
951
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A DO204AL | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | ||||
VIEW |
985
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 5A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 1.05V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 175°C | - | ||||
VIEW |
2,142
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 3A | 950mV @ 3A | 100µA @ 200V | 200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
VIEW |
629
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
3,110
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1.5A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1.5A | 1V @ 1.5A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | ||||
VIEW |
3,130
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
2,750
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A DO204AL | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | ||||
VIEW |
2,395
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 2A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | ||||
VIEW |
3,303
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1.5A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1.5A | 1.3V @ 1.5A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | ||||
VIEW |
3,637
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A DO204AL | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | ||||
VIEW |
1,885
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A DO204AL | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 200ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | ||||
VIEW |
3,993
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 2A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 1V @ 2A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | ||||
VIEW |
3,222
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
3,624
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
3,165
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 200V 5A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 5A | 1.05V @ 5A | 100µA @ 200V | 200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
VIEW |
2,574
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 2A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | ||||
VIEW |
3,247
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A DO204AL | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz |