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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
3,357
In-stock
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ON Semiconductor | DIODE GP 200V 6A MICRODE BUTTON | - | Obsolete | Tape & Reel (TR) | Through Hole | Button, Axial | Microde Button | Standard | 6A | 900mV @ 6A | 25µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 175°C | - | |||
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VIEW |
2,368
In-stock
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ON Semiconductor | DIODE GP 200V 6A MICRODE BUTTON | - | Obsolete | Tape & Reel (TR) | Through Hole | Button, Axial | Microde Button | Standard | 6A | 900mV @ 6A | 25µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 175°C | - | |||
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VIEW |
2,178
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A P600 | - | Obsolete | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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VIEW |
1,088
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A P600 | - | Active | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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VIEW |
1,500
In-stock
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Diodes Incorporated | DIODE GEN PURP 200V 6A R6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 900mV @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 175°C | - | |||
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VIEW |
966
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A P600 | - | Active | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz |