- Manufacture :
- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
1,224
In-stock
|
WeEn Semiconductors | DIODE GEN PURP 600V 4A DO201AD | - | Obsolete | Tube | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 65ns | 150°C (Max) | - | ||||
VIEW |
2,780
In-stock
|
NXP USA Inc. | DIODE GEN PURP 600V 4A DO201AD | - | Obsolete | Tube | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 65ns | 150°C (Max) | - | ||||
VIEW |
738
In-stock
|
NXP USA Inc. | DIODE GEN PURP 600V 4A DO201AD | - | Obsolete | Tube | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 65ns | 150°C (Max) | - | ||||
VIEW |
2,315
In-stock
|
NXP USA Inc. | DIODE GEN PURP 600V 4A DO201AD | - | Obsolete | Tube | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 65ns | 150°C (Max) | - | ||||
VIEW |
2,986
In-stock
|
STMicroelectronics | DIODE SCHOTTKY 600V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | ||||
VIEW |
3,805
In-stock
|
NXP USA Inc. | DIODE GEN PURP 600V 4A DO201AD | - | Obsolete | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | 150°C (Max) | - | ||||
VIEW |
1,777
In-stock
|
NXP USA Inc. | DIODE GEN PURP 600V 4A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | 150°C (Max) | - | ||||
VIEW |
802
In-stock
|
STMicroelectronics | DIODE SCHOTTKY 600V 4A DPAK | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Silicon Carbide Schottky | 4A | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | ||||
VIEW |
632
In-stock
|
STMicroelectronics | DIODE SCHOTTKY 600V 4A DPAK | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Silicon Carbide Schottky | 4A | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | ||||
VIEW |
2,156
In-stock
|
STMicroelectronics | DIODE SCHOTTKY 600V 4A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Silicon Carbide Schottky | 4A | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz |