- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
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- Voltage - Forward (Vf) (Max) @ If :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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3,874
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 6A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
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VIEW |
3,468
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 5A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 170pF @ 1V, 1MHz | |||
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VIEW |
1,802
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 4A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 150pF @ 1V, 1MHz | |||
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VIEW |
627
In-stock
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Sanken | DIODE GEN PURP 600V 30A TO3PF | - | Active | Bulk | Through Hole | TO-3PF | TO-3PF | Standard | 30A | 1.3V @ 30A | 200µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 150ns | -40°C ~ 150°C | - | |||
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VIEW |
707
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A DPAK | FRED Pt® | Active | Bulk | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Standard | 15A | 3.2V @ 15A | 200µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 22ns | -65°C ~ 175°C | - | |||
