Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SF802G C0G
RFQ
VIEW
RFQ
917
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 8A TO220AB - Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 975mV @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SF1602G C0G
RFQ
VIEW
RFQ
2,807
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A TO220AB - Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 975mV @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF802GHC0G
RFQ
VIEW
RFQ
3,160
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 975mV @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SF1602GHC0G
RFQ
VIEW
RFQ
981
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 975mV @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF1002GHC0G
RFQ
VIEW
RFQ
2,570
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 10A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 10A 975mV @ 5A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SF1002G C0G
RFQ
VIEW
RFQ
1,943
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 10A TO220AB - Active Tube Through Hole TO-220-3 TO-220AB Standard 10A 975mV @ 5A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz