Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
SF3002PTHC0G
RFQ
VIEW
RFQ
2,795
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 30A TO247AD Automotive, AEC-Q101 Active Tube Through Hole TO-247-3 TO-247AD (TO-3P) Standard 30A 950mV @ 15A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 175pF @ 4V, 1MHz
SF3002PT C0G
RFQ
VIEW
RFQ
2,451
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 30A TO247AD - Active Tube Through Hole TO-247-3 TO-247AD (TO-3P) Standard 30A 950mV @ 15A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 175pF @ 4V, 1MHz
SF1602PTHC0G
RFQ
VIEW
RFQ
2,490
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A TO247AD Automotive, AEC-Q101 Active Tube Through Hole TO-247-3 TO-247AD (TO-3P) Standard 16A 950mV @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 85pF @ 4V, 1MHz
SF2002PTHC0G
RFQ
VIEW
RFQ
1,085
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 20A TO247AD Automotive, AEC-Q101 Active Tube Through Hole TO-247-3 TO-247AD (TO-3P) Standard 20A 1.1V @ 20A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 175pF @ 4V, 1MHz
SF1602PT C0G
RFQ
VIEW
RFQ
1,121
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A TO247AD - Active Tube Through Hole TO-247-3 TO-247AD (TO-3P) Standard 16A 950mV @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 85pF @ 4V, 1MHz
SF2002PT C0G
RFQ
VIEW
RFQ
1,257
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 20A TO247AD - Active Tube Through Hole TO-247-3 TO-247AD (TO-3P) Standard 20A 1.1V @ 20A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 175pF @ 4V, 1MHz