Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
3,869
In-stock
Microsemi Corporation DIODE GEN PURP 400V 1A AXIAL Military, MIL-PRF-19500/359 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 1A 1µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C -
JANTX1N4946
RFQ
VIEW
RFQ
950
In-stock
Microsemi Corporation DIODE GEN PURP 600V 1A AXIAL Military, MIL-PRF-19500/359 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 1A 1µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -65°C ~ 175°C -
JANTX1N4942
RFQ
VIEW
RFQ
3,219
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/359 Active Bulk Through Hole A, Axial A, Axial Standard 1A 1.3V @ 1A 1µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C -
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RFQ
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RFQ
2,845
In-stock
Microsemi Corporation DIODE GEN PURP 400V 1A AXIAL Military, MIL-PRF-19500/360 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 1A 1µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C -
JAN1N4946
RFQ
VIEW
RFQ
3,009
In-stock
Microsemi Corporation DIODE GEN PURP 600V 1A AXIAL Military, MIL-PRF-19500/360 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 1A 1µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -65°C ~ 175°C -
RD0106T-H
RFQ
VIEW
RFQ
1,909
In-stock
ON Semiconductor DIODE GEN PURP 600V 1A TP - Active Bulk Through Hole TO-251-3 Short Leads, IPak, TO-251AA TP Standard 1A 1.3V @ 1A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns 150°C (Max) -
JAN1N4942
RFQ
VIEW
RFQ
3,895
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/359 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 1A 1µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C -