- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
52 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
3,083
In-stock
|
WeEn Semiconductors | DIODE GEN PURP 600V 4A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.05V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | 175°C (Max) | - | |||
|
VIEW |
3,780
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | - | - | |||
|
VIEW |
2,408
In-stock
|
STMicroelectronics | DIODE GEN PURP 600V 4A DO15 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Standard | 4A | 1.3V @ 3A | 3µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | 175°C (Max) | - | |||
|
VIEW |
3,135
In-stock
|
Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 4A SOD64 | - | Active | Tape & Box (TB) | Through Hole | SOD-64, Axial | SOD-64 | Avalanche | 4A | 1.1V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
|
VIEW |
2,556
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
2,529
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.3V @ 4A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
2,734
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.3V @ 4A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,222
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,783
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
974
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
3,139
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
2,046
In-stock
|
Vishay Semiconductor Diodes Division | DIODE AVALANCHE 150V 4A SOD64 | - | Active | Tape & Box (TB) | Through Hole | SOD-64, Axial | SOD-64 | Avalanche | 4A | 1.1V @ 5A | 10µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
616
In-stock
|
Vishay Semiconductor Diodes Division | DIODE AVALANCHE 100V 4A SOD64 | - | Active | Tape & Box (TB) | Through Hole | SOD-64, Axial | SOD-64 | Avalanche | 4A | 1.1V @ 5A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
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|
VIEW |
3,735
In-stock
|
Vishay Semiconductor Diodes Division | DIODE AVALANCHE 50V 4A SOD64 | - | Active | Tape & Box (TB) | Through Hole | SOD-64, Axial | SOD-64 | Avalanche | 4A | 1.1V @ 5A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
|
VIEW |
1,777
In-stock
|
NXP USA Inc. | DIODE GEN PURP 600V 4A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | 150°C (Max) | - | |||
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|
VIEW |
1,243
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
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|
VIEW |
1,499
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | |||
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|
VIEW |
2,105
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
|
|
VIEW |
817
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
|
|
VIEW |
630
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
VIEW |
648
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
VIEW |
3,037
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
VIEW |
3,796
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
VIEW |
2,241
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
820
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
955
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
2,838
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
2,982
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
3,653
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
1,603
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
