- Part Status :
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- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,092
In-stock
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STMicroelectronics | DIODE GEN PURP 200V 4A SMC | - | Obsolete | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | Standard | 4A | 1.25V @ 12A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | 150°C (Max) | - | |||
|
VIEW |
2,698
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO214AB | - | Active | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 4A | 1.15V @ 4A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
3,531
In-stock
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Micro Commercial Co | DIODE GEN PURP 200V 4A DO201AD | - | Obsolete | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.35V @ 4A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 60ns | -55°C ~ 150°C | - | |||
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|
VIEW |
2,345
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO214AB | - | Not For New Designs | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 4A | 1.15V @ 4A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
2,705
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 4A SOD64 | - | Active | Cut Tape (CT) | Through Hole | SOD-64, Axial | SOD-64 | Avalanche | 4A | 1.1V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
