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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,403
In-stock
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Microsemi Corporation | DIODE GEN PURP 220V 2A D5A | Military, MIL-PRF-19500/585 | Active | Bulk | Surface Mount | SQ-MELF, A | D-5A | Standard | 2A | 1.4V @ 1.2A | 500nA @ 220V | 220V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
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VIEW |
3,638
In-stock
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Microsemi Corporation | DIODE GEN PURP 440V 2A AXIAL | Military, MIL-PRF-19500/585 | Active | Bulk | Through Hole | A, Axial | - | Standard | 2A | 1.4V @ 1.2A | 500nA @ 440V | 440V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
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VIEW |
2,591
In-stock
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Microsemi Corporation | DIODE GEN PURP 660V 2A D5A | Military, MIL-PRF-19500/585 | Active | Bulk | Surface Mount | SQ-MELF, A | D-5A | Standard | 2A | 1.4V @ 1.2A | 500nA @ 660V | 660V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
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VIEW |
3,520
In-stock
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Microsemi Corporation | DIODE GEN PURP 440V 2A D5A | Military, MIL-PRF-19500/585 | Active | Bulk | Surface Mount | SQ-MELF, A | D-5A | Standard | 2A | 1.4V @ 1.2A | 500nA @ 440V | 440V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
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VIEW |
2,769
In-stock
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Microsemi Corporation | DIODE GEN PURP 220V 2A AXIAL | Military, MIL-PRF-19500/585 | Active | Bulk | Through Hole | A, Axial | Axial | Standard | 2A | 1.4V @ 1.2A | 500nA @ 220V | 220V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
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VIEW |
1,643
In-stock
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Microsemi Corporation | DIODE GEN PURP 660V 2A AXIAL | Military, MIL-PRF-19500/585 | Active | Bulk | Through Hole | A, Axial | - | Standard | 2A | 1.4V @ 1.2A | 500nA @ 660V | 660V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz |