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27 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
2,112
In-stock
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Comchip Technology | DIODE GEN PURP 300V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | ||||
VIEW |
1,207
In-stock
|
Comchip Technology | DIODE GEN PURP 200V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | ||||
VIEW |
958
In-stock
|
Comchip Technology | DIODE GEN PURP 100V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | ||||
VIEW |
1,209
In-stock
|
Comchip Technology | DIODE GEN PURP 50V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | ||||
VIEW |
2,272
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
854
In-stock
|
Comchip Technology | DIODE GEN PURP 300V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | ||||
VIEW |
2,256
In-stock
|
Comchip Technology | DIODE GEN PURP 200V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | ||||
VIEW |
1,525
In-stock
|
Comchip Technology | DIODE GEN PURP 100V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | ||||
VIEW |
742
In-stock
|
Comchip Technology | DIODE GEN PURP 50V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | ||||
VIEW |
2,411
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | ||||
VIEW |
2,597
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | ||||
VIEW |
3,364
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | ||||
VIEW |
2,091
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 300V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | ||||
VIEW |
777
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
1,832
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,427
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
3,320
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 1000V | - | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
3,975
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
3,700
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
3,180
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
1,789
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
3,874
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
2,320
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
743
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
3,167
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
3,598
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
3,680
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz |