Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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1N4937-AP
RFQ
VIEW
RFQ
2,204
In-stock
Micro Commercial Co DIODE GPP FAST 1A DO-41 - Obsolete - Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 40V - 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz
1N4936-AP
RFQ
VIEW
RFQ
2,048
In-stock
Micro Commercial Co DIODE GPP FAST 1A DO-41 - Obsolete - Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 40V - 400V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz
1N4935-AP
RFQ
VIEW
RFQ
1,968
In-stock
Micro Commercial Co DIODE GPP FAST 1A DO-41 - Obsolete - Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 40V - 200V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz
1N4934-AP
RFQ
VIEW
RFQ
1,062
In-stock
Micro Commercial Co DIODE GPP FAST 1A DO-41 - Obsolete - Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 40V - 100V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz
1N4933-AP
RFQ
VIEW
RFQ
2,179
In-stock
Micro Commercial Co DIODE GPP FAST 1A DO-41 - Obsolete - Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 40V - 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz
1N4936-TP
RFQ
VIEW
RFQ
3,479
In-stock
Micro Commercial Co DIODE GPP FAST 1A DO-41 - Obsolete - Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 40V - 400V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz
1N4935-TP
RFQ
VIEW
RFQ
3,748
In-stock
Micro Commercial Co DIODE GPP FAST 1A DO-41 - Obsolete - Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 40V - 200V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz
1N4934-TP
RFQ
VIEW
RFQ
3,905
In-stock
Micro Commercial Co DIODE GPP FAST 1A DO-41 - Obsolete - Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 40V - 100V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz
1N4933-TP
RFQ
VIEW
RFQ
3,827
In-stock
Micro Commercial Co DIODE GPP FAST 1A DO-41 - Obsolete - Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 40V - 50V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz
RMPG06JHE3/73
RFQ
VIEW
RFQ
2,702
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A MPG06 - Obsolete Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
DHG30I1200HA
RFQ
VIEW
RFQ
1,950
In-stock
IXYS DIODE GEN PURP 1.2KV 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 (HA) Standard 30A 2.26V @ 30A 50µA @ 1200V 1200V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C -
DHG20I1200HA
RFQ
VIEW
RFQ
3,428
In-stock
IXYS DIODE GEN PURP 1.2KV 20A TO247 - Active Tube Through Hole TO-247-2 TO-247 (HA) Standard 20A 2.24V @ 20A 25µA @ 1200V 1200V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C -
DHG10I1200PA
RFQ
VIEW
RFQ
1,113
In-stock
IXYS DIODE GEN PURP 1.2KV 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 2.22V @ 10A 15µA @ 1200V 1200V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C -
RMPG06JHE3/54
RFQ
VIEW
RFQ
2,092
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A MPG06 - Obsolete Tape & Reel (TR) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06JHE3_A/73
RFQ
VIEW
RFQ
1,086
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A MPG06 - Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
1N4937-E3/53
RFQ
VIEW
RFQ
3,815
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO204AL Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 12pF @ 4V, 1MHz
RMPG06JHE3_A/53
RFQ
VIEW
RFQ
1,264
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 600V 200NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06J-E3/100
RFQ
VIEW
RFQ
3,435
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 600V 200NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
1N4937GHB0G
RFQ
VIEW
RFQ
666
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4937GHA0G
RFQ
VIEW
RFQ
3,841
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AL Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4937GHR0G
RFQ
VIEW
RFQ
3,876
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AL Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4937GHR1G
RFQ
VIEW
RFQ
1,304
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AL Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4936GHB0G
RFQ
VIEW
RFQ
2,756
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4936GHA0G
RFQ
VIEW
RFQ
2,315
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO204AL Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
RMPG06JHE3_A/54
RFQ
VIEW
RFQ
1,373
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A MPG06 - Active Cut Tape (CT) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06JHE3_A/54
RFQ
VIEW
RFQ
3,145
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A MPG06 - Active Tape & Reel (TR) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
DHG60I1200HA
RFQ
VIEW
RFQ
2,850
In-stock
IXYS DIODE GEN PURP 1.2KV 60A TO247AD - Active Tube Through Hole TO-247-3 TO-247AD Standard 60A 2.32V @ 60A 125µA @ 1200V 1200V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C -
1N4936GHR0G
RFQ
VIEW
RFQ
3,837
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO204AL Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4936GHR1G
RFQ
VIEW
RFQ
898
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO204AL Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4937G B0G
RFQ
VIEW
RFQ
3,562
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 10pF @ 4V, 1MHz