Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
3,047
In-stock
Toshiba Semiconductor and Storage DIODE GEN PURP 300V 3A L-FLAT - Obsolete Tape & Reel (TR) Surface Mount L-FLAT™ L-FLAT™ (4x5.5) Standard 3A (DC) 1.3V @ 3A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -40°C ~ 150°C -
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RFQ
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RFQ
3,569
In-stock
Toshiba Semiconductor and Storage DIODE GEN PURP 300V 3A L-FLAT - Obsolete Tape & Reel (TR) Surface Mount L-FLAT™ L-FLAT™ (4x5.5) Standard 3A (DC) 1.3V @ 3A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -40°C ~ 150°C -
ES3F R7G
RFQ
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RFQ
1,582
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.3V @ 3A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 30pF @ 4V, 1MHz
ES3FHM6G
RFQ
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RFQ
3,584
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO214AB Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.3V @ 3A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 30pF @ 4V, 1MHz
ES3F M6G
RFQ
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RFQ
648
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO214AB - Not For New Designs Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.3V @ 3A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 30pF @ 4V, 1MHz
ES3FHR7G
RFQ
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RFQ
2,417
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO214AB Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 3A 1.3V @ 3A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 30pF @ 4V, 1MHz