- Series :
- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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51 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
3,885
In-stock
|
ON Semiconductor | DIODE GEN PURP 200V 4A DO201AD | SWITCHMODE™ | Obsolete | Bulk | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | ||||
VIEW |
3,673
In-stock
|
ON Semiconductor | DIODE GEN PURP 200V 4A AXIAL | SWITCHMODE™ | Obsolete | Bulk | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | ||||
VIEW |
680
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
974
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
928
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
3,776
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO214AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 4A | 1.25V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
2,831
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO214AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | ||||
VIEW |
1,901
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | ||||
VIEW |
1,499
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | ||||
VIEW |
2,470
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | ||||
VIEW |
630
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | ||||
VIEW |
3,780
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
624
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
1,853
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
3,398
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
2,838
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
2,982
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | ||||
VIEW |
2,943
In-stock
|
ON Semiconductor | DIODE GEN PURP 200V 4A DO201AD | SWITCHMODE™ | Obsolete | Cut Tape (CT) | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | ||||
VIEW |
932
In-stock
|
ON Semiconductor | DIODE GEN PURP 200V 4A DO201AD | SWITCHMODE™ | Obsolete | Tape & Reel (TR) | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | ||||
VIEW |
3,331
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO214AB | - | Active | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 4A | - | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
2,913
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO214AB | - | Not For New Designs | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 4A | 1.25V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
3,655
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
2,489
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
2,584
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | ||||
VIEW |
2,322
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | ||||
VIEW |
3,222
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
3,624
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
2,072
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
2,731
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
3,139
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz |