Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction
GLOBAL STOCKS
APT30D40BG
RFQ
VIEW
RFQ
1,372
In-stock
Microsemi Corporation DIODE GEN PURP 400V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.5V @ 30A 250µA @ 400V 400V Fast Recovery = 200mA (Io) 32ns -55°C ~ 175°C
APT30D20BG
RFQ
VIEW
RFQ
3,541
In-stock
Microsemi Corporation DIODE GEN PURP 200V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.3V @ 30A 250µA @ 200V 200V Fast Recovery = 200mA (Io) 24ns -55°C ~ 175°C
APT30D30BG
RFQ
VIEW
RFQ
932
In-stock
Microsemi Corporation DIODE GEN PURP 300V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.4V @ 30A 250µA @ 300V 300V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C
APT30DQ120BG
RFQ
VIEW
RFQ
3,618
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 3.3V @ 30A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 320ns -55°C ~ 175°C
APT30DQ100BG
RFQ
VIEW
RFQ
2,450
In-stock
Microsemi Corporation DIODE GEN PURP 1KV 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 3V @ 30A 100µA @ 1000V 1000V Fast Recovery = 200mA (Io) 295ns -55°C ~ 175°C
APT30DQ60BG
RFQ
VIEW
RFQ
2,141
In-stock
Microsemi Corporation DIODE GEN PURP 600V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 2.4V @ 30A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -55°C ~ 175°C
APT30D60BG
RFQ
VIEW
RFQ
1,709
In-stock
Microsemi Corporation DIODE GEN PURP 600V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.8V @ 30A 250µA @ 600V 600V Fast Recovery = 200mA (Io) 85ns -55°C ~ 175°C